近日西安交通大學(xué)發(fā)表文獻(xiàn)《Boosting the charge injection of polymer electrets for light-stimulated artificial synaptic transistors》，文獻(xiàn)中采用LUYOR-3405可調(diào)光強(qiáng)度的臺(tái)式紫外線燈進(jìn)行紫外輻照。

文獻(xiàn)摘要：

增強(qiáng)光刺激人工突觸晶體管的聚合物駐極體的電荷注入

半導(dǎo)體/聚合物駐極體結(jié)構(gòu)廣泛應(yīng)用于有機(jī)場(chǎng)效應(yīng)晶體管、存儲(chǔ)器和人工突觸。由于能級(jí)不同，激子分離效率和從半導(dǎo)體到絕緣聚合物的電荷注入仍然存在挑戰(zhàn)。在這項(xiàng)工作中，我們提出了一種有效的方法來(lái)提高電荷注入效率，從而改善光學(xué)響應(yīng)，通過(guò)在p-型半導(dǎo)體和駐極體層。例如，40 nm 2,7-二辛基[1]苯并噻吩并[3,2- b ]苯并噻吩 (C 8 -BTBT)/2 nm C 8 -PTCDI/聚合物駐極體基突觸晶體管表現(xiàn)出 5.6 × 的優(yōu)異光敏度10 6與其他晶體管相比。 C 8 -PTCDI不僅充當(dāng)電子受體以改善激子解離并增加光生電荷濃度，而且還在通道中提供電子傳輸層以將電子注入PS中。為了驗(yàn)證其普適性，還制備了40 nm C 8 -BTBT/2 nm [6,6]-苯基-C71-丁酸甲酯（PC 71 BM）/聚合物駐極體突觸晶體管，光敏度高達(dá)1.4 × 10 6 . 此外，利用C 8 -BTBT/C 8 -PTCDI/聚合物駐極體的配置，制造了光刺激人工突觸晶體管，并將其用于“小狗”圖片學(xué)習(xí)、神經(jīng)網(wǎng)絡(luò)計(jì)算和圖像識(shí)別任務(wù)（識(shí)別率高達(dá)至 98.3%）。

Semiconductor/polymer electret constructions are extensively utilized in organic field-effect transistors, memories, and artificial synapses. The challenge of exciton separation efficiency and charge injection from semiconductors into insulating polymers persist due to their disparate energy levels. In this work, we propose an effective method to enhance charge injection efficiency, thereby improving the optical response, by incorporating N,N′-dioctyl-3,4,9,10-perylenetetracarboxylic diimide (C8-PTCDI) between the p-type semiconductor and the electret layer. For example, the 40 nm 2,7-diocty[1]benzothieno[3,2-b]benzothiophene (C8-BTBT)/2 nm C8-PTCDI/polymer electret-based synaptic transistors show a superior photosensitivity of 5.6 × 106, compared with other transistors. C8-PTCDI not only acts as an electron acceptor to improve the exciton dissociation and increase the photo-induced charge concentration, but also provides an electron transport layer in the channel for electron injection into PS. To verify its universality, 40 nm C8-BTBT/2 nm [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM)/polymer electret synaptic transistors were also prepared with a photosensitivity of up to 1.4 × 106. Moreover, utilizing a configuration of C8-BTBT/C8-PTCDI/polymer electrets, light-stimulated artificial synaptic transistors were fabricated and employed in “pup” picture learning, neural network computing and image recognition tasks (achieving a recognition rate of up to 98.3%).

Light illumination

The light source was provided by using a portable LUYOR-3405 UV LAMP with adjustable light intensity. The solar power meter (model LH-122) used in this work measures light intensity with a spectral response range of 400–1100 nm and a resolution of 1 μW cm?2.

Journal of Materials Chemistry C ( IF 5.7 ) 

Pub Date : 2024-08-14 , 

文獻(xiàn)地址：DOI: 10.1039/d4tc02706j